View IRGP4072DPBF_4373791.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD - 97317
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
* * * * * * * * Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 150 C Square RBSOA 100% of the parts tested for clamped inductive load Ultra fast soft Recovery Co-Pak Diode Tight parameter distribution Lead Free Package
C
IRGP4072DPBF
VCES = 300V IC = 40A, TC = 100C
G
VCE(on) typ. = 1.46V
E
Benefits
* High Efficiency in a wide range of applications * Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses * Rugged transient Performance for increased reliability * Low EMI
n-channel
C
Applications
* * * * Uninterruptible Power Supplies Battery operated vehicles Welding Solar converters and inverters
E C G
TO-247AC
G Gate
C Collector
E Emitter
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 25C IF @ TC = 100C IFM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current Clamped Inductive Load Current Diode Continous Forward Current Diode Continous Forward Current Diode Maximum Forward Current Transient Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m)
Max.
300 70 40 120 120 70 40 120 20 30 180 71 -55 to +150
Units
V
c e
A
Continuous Gate-to-Emitter Voltage
V W
C
Thermal Resistance
Parameter
RJC (IGBT) RJC (Diode) RCS RJA Thermal Resistance Junction-to-Case-(each IGBT) Thermal Resistance Junction-to-Case-(each Diode) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
--- --- --- ---
Typ.
--- --- 0.24 80
Max.
0.70 0.87 --- ---
Units
C/W
1
www.irf.com
04/16/08
IRGP4072DPBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)CES
V(BR)CES/TJ
Min.
300 -- -- -- 2.6 -- -- -- -- -- -- --
Typ.
-- 0.20 1.46 1.59 -- -13 28 1.0 450 2.26 1.53 --
Max. Units
-- -- 1.70 -- 5.0 -- -- 25 -- 2.69 -- 100 nA V V
Conditions
VGE = 0V, IC = 1.0mA
Ref.Fig
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
VCE(on) VGE(th)
VGE(th)/TJ
Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Collector-to-Emitter Leakage Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current
V/C VGE = 0V, IC = 1mA (25C-150C) V IC = 40A, VGE = 15V, TJ = 25C IC = 40A, VGE = 15V, TJ = 150C V VCE = VGE, IC = 500A mV/C VCE = VGE, IC = 1.0mA (25C - 150C) S VCE = 25V, IC = 40A A VGE = 0V, VCE = 300V VGE = 0V, VCE = 300V, TJ = 150C IF = 40A IF = 40A, TJ = 150C VGE = 30V
5,6,7 9,10,11 9, 10, 11, 12
gfe ICES VFM IGES
8
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Eon Eoff Etotal td(on) tr td(off) tf Cies Coes Cres RBSOA Erec trr Irr Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current
Min.
-- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- --
Typ.
73 13 26 409 838 1247 18 36 144 95 713 1076 1789 16 39 176 133 2265 190 58
Max. Units
110 20 39 525 1017 1542 23 50 121 124 -- -- -- -- -- -- -- -- -- -- pF VGE = 0V VCC = 30V ns J ns J nC IC = 40A VGE = 15V VCC = 240V
Conditions
Ref.Fig 23 CT1
IC = 40A, VCC = 240V, VGE = 15V RG = 10, L = 200H, TJ = 25C
Energy losses include tail & diode reverse recovery
CT3
IC = 40A, VCC = 240V, VGE = 15V RG = 10, L = 200H, TJ = 25C
CT3
IC = 40A, VCC = 240V, VGE=15V RG=10, L=200H, TJ = 150C
Energy losses include tail & diode reverse recovery
13, 15 CT3 WF1, WF2 14, 16 CT3 WF1 WF2 22
IC = 40A, VCC = 240V, VGE = 15V RG = 10, L = 200H TJ = 150C
f = 1.0Mhz TJ = 150C, IC = 120A VCC = 240V, Vp =300V Rg = 10, VGE = +15V to 0V
4 CT2
FULL SQUARE -- -- -- 909 122 36 -- -- -- J ns A
TJ = 150C VCC = 240V, IF = 40A VGE = 15V, Rg = 10, L =200H, Ls = 150nH
17, 18, 19 20, 21
WF3
Notes: VCC = 80% (VCES), VGE = 15V, L = 200H, RG = 10. This is only applied to TO-247AC package. Pulse width limited by max. junction temperature.
2
www.irf.com
IRGP4072DPBF
80 70 60 50 40 30 20 10 0 25 50 75 100 125 150 T C (C)
Ptot (W)
200 175 150 125 100 75 50 25 0 0 25 50 75 T C (C) 100 125 150
IC (A)
Fig. 1 - Maximum DC Collector Current vs. Case Temperature
1000
Fig. 2 - Power Dissipation vs. Case Temperature
1000
100
10sec 100sec
100
IC (A)
IC (A)
10
TC = 25C TJ = 150C Single Pulse
1msec
10
1 1 10 VCE (V) 100 1000
1 10 100 VCE (V) 1000
Fig. 3 - Forward SOA TC = 25C, TJ 150C; VGE =15V
200 180 160 140
ICE (A)
Fig. 4 - Reverse Bias SOA TJ = 150C; VGE =15V
200 180 160
ICE (A)
120 100 80 60 40 20 0 0 2 4 6
VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
140 120 100 80 60 40 20 0 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
8
10
0
2
4
6
8
10
VCE (V)
VCE (V)
Fig. 5 - Typ. IGBT Output Characteristics TJ = -40C; tp = 60s
Fig. 6 - Typ. IGBT Output Characteristics TJ = 25C; tp = 60s
www.irf.com
3
IRGP4072DPBF
200 180 160 140
ICE (A)
100
VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
80
120 100 80 60 40 20 0 0 2 4 6 8 10
60
IF (A)
-40c 25C 150C
40
20
0 0.0 1.0 2.0 VF (V) 3.0 4.0
VCE (V)
Fig. 7 - Typ. IGBT Output Characteristics TJ = 150C; tp = 60s
20 18 16 14
VCE (V)
Fig. 8 - Typ. Diode Forward Characteristics tp = 60s
20 18 16 14
VCE (V)
12 10 8 6 4 2 0 5 10 VGE (V)
ICE = 20A ICE = 40A ICE = 80A
12 10 8 6 4 2 0 5 10 VGE (V)
ICE = 20A ICE = 40A ICE = 80A
15
20
15
20
Fig. 9 - Typical VCE vs. VGE TJ = -40C
20 18 16 14
VCE (V)
ICE (A)
Fig. 10 - Typical VCE vs. VGE TJ = 25C
200 180 160 140 T J = 25C T J = 150C
12 10 8 6 4 2 0 5 10 VGE (V)
ICE = 20A ICE = 40A ICE = 80A
120 100 80 60 40 20 0
15
20
0
5 VGE (V)
10
15
Fig. 11 - Typical VCE vs. VGE TJ = 150C
Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 10s
4
www.irf.com
IRGP4072DPBF
3000 2500 2000
Energy (J)
1000
EOFF 1500 1000 EON 500 0 0 10 20 30 40 IC (A) 50 60 70 80
Swiching Time (ns)
tF tdOFF 100
tR
tdON
10 0 10 20 30 40 IC (A) 50 60 70 80
Fig. 13 - Typ. Energy Loss vs. IC TJ = 150C; L = 200H; VCE = 240V, RG = 10; VGE = 15V
2500 EOFF 2000
Fig. 14 - Typ. Switching Time vs. IC TJ = 150C; L = 200H; VCE = 240V, RG = 10; VGE = 15V
1000 tdOFF
Swiching Time (ns)
Energy (J)
tF 100 tR
1500 EON 1000
tdON
500 0 25 50 75 100 125
10 0 25 50 75 100 125 RG ()
Rg ( )
Fig. 15 - Typ. Energy Loss vs. RG TJ = 150C; L = 200H; VCE = 240V, ICE = 40A; VGE = 15V
40 RG = 10 35 RG = 22
Fig. 16 - Typ. Switching Time vs. RG TJ = 150C; L = 200H; VCE = 240V, ICE = 40A; VGE = 15V
40
35
IRR (A)
60 80
IRR (A)
30
30
25
RG = 47 RG = 100
25
20
15 0 20 40 IF (A)
20 0 25 50 RG () 75 100
Fig. 17 - Typ. Diode IRR vs. IF TJ = 150C
Fig. 18 - Typ. Diode IRR vs. RG TJ = 150C
www.irf.com
5
IRGP4072DPBF
40
2600 2400
80A 10
35
2200
Q RR (C)
2000 1800 1600 1400 1200
100 47
40A 22
IRR (A)
30
20A
25
20 300 400 500 600 700 800 diF /dt (A/s)
1000 300 400 500 600 700 800 diF /dt (A/s)
Fig. 19 - Typ. Diode IRR vs. diF/dt VCC = 240V; VGE = 15V; IF = 40A; TJ = 150C
Fig. 20 - Typ. Diode QRR vs. diF/dt VCC = 240V; VGE = 15V; TJ = 150C
1200 1000 800
Energy (J)
10000
RG = 10 RG = 22
RG = 47
Cies
Capacitance (pF)
1000
600 400 200 0 20 30 40
RG = 100
Coes 100 Cres
10
50 IF (A) 60 70 80
0
50
100 VCE (V)
150
200
Fig. 21 - Typ. Diode ERR vs. IF TJ = 150C
16
VGE , Gate-to-Emitter Voltage (V)
Fig. 22 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz
V CES = 150V V CES = 240V
14 12 10 8 6 4 2 0 0
25
50
75
Q G , Total Gate Charge (nC)
Fig. 23 - Typical Gate Charge vs. VGE ICE = 40A; L = 100H
6
www.irf.com
IRGP4072DPBF
1
D = 0.50
Thermal Response ( Z thJC )
0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE )
J R1 R1 J 1 2 R2 R2 R3 R3 3 R4 R4 C 1 2 3 4 4
Ri (C/W)
0.01788 0.12215 0.33816 0.22196
i (sec)
0.00001 0.000108 0.001262 0.007931
Ci= i/Ri Ci i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1
0.001 1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
Thermal Response ( Z thJC )
1 D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01
J J 1
R1 R1 2
R2 R2
R3 R3 3 C 3
Ri (C/W) i (sec) 0.2758 0.000776 0.3708 0.2252 0.002206 0.013373
0.01
1
2
Ci= i/Ri Ci i/Ri
0.001
SINGLE PULSE ( THERMAL RESPONSE )
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1
0.0001 1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig. 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
www.irf.com
7
IRGP4072DPBF
L
L VC C D UT
0
80 V Rg
DU T
4 80V
1K
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
R=
VCC ICM
d io d e clamp / DU T
L
- 5V DU T / D RIVER
Rg
DUT
Rg
VCC
VCC
Fig.C.T.3 - Switching Loss Circuit
Fig.C.T.4 - Resistive Load Circuit
8
www.irf.com
IRGP4072DPBF
400 80
400
120
300 tf 200 VCE (V)
60
300
tr
TEST CURRENT
90
VCE (V)
5% V CE
100
5% ICE
20
100
10% test current
30
5% V CE
0
Eof f Loss
0
0
Eon
0
-100 -0.35
0.15 time(s)
-20 0.65
-100 -0.4 -0.3 -0.2 -0.1 0.0 0.1 time (s)
-30 0.2
Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 150C using Fig. CT.3
Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 150C using Fig. CT.3
100 50 QRR 0 tRR -50 -100 VF (V) -150 -200 -250 -300 -350 -400 -1.00
Peak IRR 10% Peak IRR
50 40 30 20 10 0 -10 -20 -30 -40 -50 3.00 IF (A)
0.00
1.00 time (S)
2.00
Fig. WF3 - Typ. Diode Recovery Waveform @ TJ = 150C using Fig. CT.3
www.irf.com
ICE (A)
9
ICE (A)
90% ICE
40
200
90% test current
60
IRGP4072DPBF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
@Y6HQG@) UCDTADTA6IADSAQ@"A XDUCA6TT@H7GA GPUA8P9@A$%$& 6TT@H7G@9APIAXXA"$A! DIAUC@A6TT@H7GAGDI@AACA Ir)AAQAAvAhriyAyvrAvv vqvphrAAGrhqArrA DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@ Q6SUAIVH7@S
,5)3(
A "$C $%AAAAAAAAAAA$&
96U@A8P9@ @6SA A2A! X@@FA"$ GDI@AC
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 04/08
10
www.irf.com

▲Up To Search▲

Price & Availability of IRGP4072DPBF

	To Download IRGP4072DPBF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .